Implantation damage build-up curves measured along these crystal directions revealing strong radiation resistance
and channelling patterns along the a, c and m axes in GaN.
Simulated
and experimental reflectance curves of the absorber in the
figure as well as the RBS spectra of the as deposited stack, after air annealing at 400 °C and vacuum annealing at 600 °C, both for 650 h.
Beryllium and Deuterium deposition on the inner (2IN) and outer (2OW) collectors for ILW 2 campaign.
The red line represents the model for the Be deposition.