Wide bandgap group-III nitrides and metal oxides such as (Al)GaN, Ga2O3 and MoO3 are among the most relevant materials supporting the development of the new optoelectronic era. In order to incorporate such devices operating in extreme environments like space and reactors it is mandatory to understand their radiation resistance. The group has been involved in research projects to investigate the damage build-up processes during ion irradiation and to test their performance as radiation detectors and LED's [SFRH/BPD/98738/2013]. GaN and AlGaN show strong dynamic annealing leading to efficient defect recombination during the irradiation. This extraordinary resistance to radiation damage was evidenced by experiments as well as Molecular Dynamics simulations [SFRH/BD/111733/2015]. GaN microwires were furthermore processed into sensor devices and the tests revealed their good performance as detectors for UV radiation and protons.

 


Video title: Simulation of a swift heavy ion penetrating a GaN crystal (by Miguel Sequeira).

Hosting institution and funding

Hosted by Instituto de Plasmas e Fusão Nuclear of Instituto Superior Técnico, funded by the Portuguese Fundação para a Ciência e a Tecnologia [UID/FIS/50010/2013 + SFRH/BPD/98738/2013 + SFRH/BD/111733/2015 + NASIB: NAno-engineering of wide bandgap Semiconductors using Ion Beams - POCI-01-0145-FEDER-028011; LISBOA-01-0145-FEDER-028011] and RADIATE [H2020-INFRAIA-2018-01: Research and Development with Ion Beams - Advancing Technology in Europe].

Contacts

Any request for information about the project should be addressed to
Dr. Katharina Lorenz / Dr. Eduardo Alves
  lorenz at ctn.tecnico.ulisboa.pt /   ealves at ctn.tecnico.ulisboa.pt

Instituto de Plasmas e Fusão Nuclear
Instituto Superior Técnico
Campus Tecnológico e Nuclear
Estrada Nacional 10 (km 139,7)
2695-066 Bobadela LRS - Portugal